UNION COUNTRIES AND THE RUSSIAN FEDERATION

The article is aimed at the consideration of the problems occurring in the field of economic and legal integration of fundamental principles concerning the innovations, the innovation process and the types of innovations. The priority of economy innovation development and the suffi cient legal regulation of this process in the global community is determinated in the article. The basic notions of Innovation law such as: “innovation”, “innovative activity”, “innovation process” are carefully examined and analyzed in detail. The authors have classified the innovation types on various grounds. They came to the conclusion, that there is the necessity to establish a common understanding of the above mentioned notions, to develop the integrated mechanisms to stimulate innovative activity of all innovation process participants. The dominating method of research is a comparative analysis of the basic notions, economic prerequisites and Innovation law

Shilnikov Lemma for a nondegenerate critical manifold of a Hamiltonian system

We prove an analog of Shilnikov Lemma for a normally hyperbolic symplectic critical manifold $M\subset H^{-1}(0)$ of a Hamiltonian system. Using this result, trajectories with small energy $H=\mu>0$ shadowing chains of homoclinic orbits to $M$ are represented as extremals of a discrete variational problem, and their existence is proved. This paper is motivated by applications to the Poincar\'e second species solutions of the 3 body problem with 2 masses small of order $\mu$. As $\mu\to 0$, double collisions of small bodies correspond to a symplectic critical manifold of the regularized Hamiltonian system

UNION COUNTRIES AND THE RUSSIAN FEDERATION

The article is aimed at the consideration of the problems occurring in the field of economic and legal integration of fundamental principles concerning the innovations, the innovation process and the types of innovations. The priority of economy innovation development and the suffi cient legal regulation of this process in the global community is determinated in the article. The basic notions of Innovation law such as: “innovation”, “innovative activity”, “innovation process” are carefully examined and analyzed in detail. The authors have classified the innovation types on various grounds. They came to the conclusion, that there is the necessity to establish a common understanding of the above mentioned notions, to develop the integrated mechanisms to stimulate innovative activity of all innovation process participants. The dominating method of research is a comparative analysis of the basic notions, economic prerequisites and Innovation law

How close can one approach the Dirac point in graphene experimentally?

The above question is frequently asked by theorists who are interested in graphene as a model system, especially in context of relativistic quantum physics. We offer an experimental answer by describing electron transport in suspended devices with carrier mobilities of several 10^6 cm^2V^-1s^-1 and with the onset of Landau quantization occurring in fields below 5 mT. The observed charge inhomogeneity is as low as \approx10^8 cm^-2, allowing a neutral state with a few charge carriers per entire micron-scale device. Above liquid helium temperatures, the electronic properties of such devices are intrinsic, being governed by thermal excitations only. This yields that the Dirac point can be approached within 1 meV, a limit currently set by the remaining charge inhomogeneity. No sign of an insulating state is observed down to 1 K, which establishes the upper limit on a possible bandgap

Micrometer-scale ballistic transport in encapsulated graphene at room temperature

Devices made from graphene encapsulated in hexagonal boron-nitride exhibit pronounced negative bend resistance and an anomalous Hall effect, which are a direct consequence of room-temperature ballistic transport on a micrometer scale for a wide range of carrier concentrations. The encapsulation makes graphene practically insusceptible to the ambient atmosphere and, simultaneously, allows the use of boron nitride as an ultrathin top gate dielectric